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Conference Presentations

2016

  • G. Lippert, J. Dabrowski, M. C. Asensio, J. Avila, J. Baringhaus, I. Colambo, F. Herzinger, J. Maultzsch, T. Schaffus, T. Schroeder, M. Sowinska, Ch. Tegenkamp, D. Vignaud, G. Lupina, "Gas (Ethylene) and Solid Source MBE Growth of Graphene on Ge(001)", European Workshop on Epitaxial Graphene and 2D Materials, Bergisch Gladbach, May 17 - 21, 2016, Germany
  • G. Lippert, J. Dabrowski, J. Avila, J. Baringhaus, I. Colambo, Yu. S. Dedkov, F.Herziger, G.Lupina, J. Maultzsch, T. Schaffus, T. Schroeder, M. Sowinska, Ch.Tegenkamp, D. Vignaud, M.-C. Asensio, "Solid and Gas Source MBE of Graphene on Ge(001)", 19th International Conference on Molecular-Beam Epitaxy, Montpellier, September 04 - 09, 2016, France
  • G. Lupina, C. Strobel, M. Junige, J. Kitzmann, M. Lukosius, M. Albert, J.W. Bartha, Ch. Wenger, "Dielectric-Graphene and Silicon-Graphene integration for Graphene-Based Devices", Graphene 2016, Genoa, April 19 - 22, 2016, Italy
  • V.Passi, A.Gahoi, J.Ruhkopf, S.Kataria, F. Vaurette, E. Pallecchi, H. Happy, M.C.Lemme, "Contact Resistance Study of "Edge-Contacted" Metal-Graphene Interfaces",in Solid State Device Research Conference (ESSDERC), 2016 (Accepted)

2015

  • J.D. Aguirre-Morales, S. Frégonèse, C. Mukherjee, C. Maneux and T. Zimmer, "An New Physics-based Compact Model for Bilayer Graphene Field-Effect Transistors", ESSDERC 2015, 45th European Solid-State Device Conference, September 14-18, 2015 - Graz, Austria
  • G. Lippert, J. Dabrowski, T. Schaffus, M.C. Asensio, J. Avila, J. Baringhaus, I. Colambo, F. Herziger, J. Maultzsch, T. Schroeder, M. Sowinska, Ch. Tegenkamp, G. Lupina, "Graphene Direct Growth on Germanium in UHV",E-MRS Fall Meeting 2015. Symposium O, Warsaw, September 15 - 18, 2015, Poland
  • C. Mukherjee, J. D. Aguirre-Morales, S. Fregonese, T. Zimmer and C. Maneux, H. Happy, W. Wei, "Characterization and Modeling of Low-frequency Noise in CVD-grown Graphene FETs", ESSDERC 2015, 45th European Solid-State Device Conference, September 14-18, 2015 - Graz, Austria
  • A. D. D. Dwivedi, S. Fregonese, J.D. Aguirre-Morales, T. Zimmer, "2D-Device simulation of Graphene Transistors using the SENTAURUS simulator", International Semiconductor Science and Technology Conference 2015 (ISSTC2015), May 11-13, 2015, Kuşadası, Turkey
  • J.D. Aguirre-Morales, S. Frégonèse, M. S. Khenissa, A.D.D. Dwivedi, H. Happy, T. Zimmer, "Towards Amplifier Design with a SiC Graphene Field-Effect Transistor", EUROSOI-ULIS 2015, 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, January 26-28, 2015 - Bologna, Italy
  • V. Di Lecce, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, "Graphene-base heterojunction transistors for post-CMOS high-speed applications: Hopes and challenges", 73rd Device Research Conference—DRC 2015, Columbus OH, (USA), June 2015
  • P. Palestri, E. Caruso, F. Driussi, D. Esseni, D. Lizzit, P. Osgnach, S. Venica, and L. Selmi, "State-of-the-art semi-classical Monte Carlo method for carrier transport in nanoscale transistors", in Proceedings of Microelectronics, Electronics and Electronic Technology Conference, May 2015, pp. 5-12
  • S. Vaziri, M. Belete, A. D. Smith, E. Dentoni Litta, G. Lupina, M. C. Lemme, and M. Ostling, “Step tunneling-enhanced hot-electron injection in vertical graphene base transistors,” in Solid State Device Research Conference (ESSDERC), 2015 45th European, September 14- 18, 2015, pp. 198–201.
  • Y. Illarionov, M. Waltl, A. Smith, S. Vaziri, M. Ostling, M. Lemme, and T. Grasser, “Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors,” in Solid State Device Research Conference (ESSDERC), 2015 45th European, September 14-18, 2015, pp. 172–175.
  • Y. Illarionov, M. Waltl, A. D. Smith, S. Vaziri, M. Ostling, T. Mueller, M. C. Lemme, T. Grasser, and others, “Hot-carrier degradation in single-layer double-gated graphene field-effect transistors,” in Reliability Physics Symposium (IRPS), 2015 IEEE International, April 19-23, 2015, p. XT–2.
  • Y. Illarionov, M. Waltl, A. D. Smith, S. Vaziri, M. Ostling, M. C. Lemme, T. Crasser, and others, “Impact of hot carrier stress on the defect density and mobility in double-gated graphene field-effect transistors,” in Ultimate Integration on Silicon (EUROSOI-ULIS), January 26-28, 2015 Joint International EUROSOI Workshop and International Conference on, 2015, pp. 81–84.
  • A. Gahoi, V. Passi, S. Kataria, S. Wagner, A. Bablich, M. C. Lemme, "Systematic comparison of metal contacts on CVD graphene," in Solid State Device Research Conference (ESSDERC), September 14-18, 2015, 45th European, 2015, pp. 184-187.
  • A. Gahoi, V. Passi, S. Kataria, S. Wagner, A. Bablich, and M. C. Lemme, “Systematic study of the palladium-graphene contact,” in Ultimate Integration on Silicon (EUROSOI-ULIS), 2015 Joint International EUROSOI Workshop and International Conference on, January 26-28, 2015, pp. 309–312.
  • T. Cusati, G. Fiori, A. Gahoi, V. Passi, A. Fortunelli, M. Lemme, and G. Iannaccone, “Understanding the nature of metal-graphene contacts: A theoretical and experimental study,” 2015 IEEE International Electron Devices Meeting (IEDM), December 07-09, 2015, pp. 12–7.

2014

  • G. Ruhl, " Graphene oder wie man einen Elefanten balanciert", 6th NRW Nano Konference, Dortmund Germany, December 01-02, 2014
  • P. Nakkala, A. Martin, M. Campovecchio, H. Happy., M.S. Khenissa, M.M. Belhaj, D. Mele, I. Colambo, E. Pallecchi, D. Vignaud,"High frequency characterization and compact electrical modelling of graphene field effect transistors",44th European Microwave Conference and 9th European Microwave Integrated Circuits Conference, EuMC/EuMIC 2014, Rome, Italy, october 6-9, 2014
  • Khenissa M., Mele D., Belhaj M., Colambo I., Pallecchi E., Vignaud D., Happy H. ,Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance, Proceedings of 9th European Microwave Integrated Circuits Conference, EuMIC 2014, Rome, Italy, october 6-7, 2014
  • C. Mukherjee, S. Fregonese, T. Zimmer, C. Maneux, H. Happy, D. Mele, « Qualitative Assessment of Epitaxial Graphene FETs on SiC Substrates via Pulsed Measurements and Temperature Variation, ESSDERC, Venice, Italy, September 23-25, 2014
  • V. Di Lecce, R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, G. Baccarani, "Impact of Crystallographic Orientation and Impurity Scattering in Graphene-Base Heterojunction Transistors for Terahertz Operation", to be presented at ESSDERC 2014, Venice, Italy, September 22-26, 2014
  • S. Vaziri, A.D. Smith, G. Lupina, M.C. Lemme, M. Ostling, "PDMS-supported graphene transfer using intermediary polymer layers," Solid State Device Research Conference (ESSDERC), 2014 44th European , vol., no., pp.309-312, 22-26 Sept. 2014
    doi: 10.1109/ESSDERC.2014.6948822
  • J. Dabrowski et al., Van der Waals Epitaxy of Graphene on Hexagonal Boron Nitride: a Process Controlled by Defects and Impurities, Atomic Structure of Nanosystems from First-Principles Simulations and Microscopy eEperiments, Helsinki, Finland, June 03 - 05, 2014
  • Khenissa M.S., Mele D., Belhaj M.M., Colambo I., Pallecchi E., Vignaud, D., Happy H., Graphene field effect transistors on SiC with T-shaped gate : homogeneity and RF performance, Proceedings of 4th Graphene Conference, Graphene 2014, Toulouse, France, may 6-9, 2014
  • J.D. Aguirre - Morales, C. Mukherjee, S. Fregonese, C. Maneux and T. Zimmer, “Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms,” « Graphene 2014 » à Toulouse, France, May 06-09, 2014
  • I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, M.C. Asensio , D. Vignaud, "Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy",4th Graphene Conference, Graphene 2014, Toulouse, France, may 6-9, 2014
  • G. Lupina et al., Challenges in Integrating Graphene with CMOS Technology Platform Graphene 2014, Toulouse, France, May 06 - 09, 2014
  • C. Mukherjee, J. D. Aguirre-Morales, S. Fregonese, T. Zimmer, C. Maneux, “Statistical Study on the Variation of Device Performance in CVD-grown Graphene FETs,” « Graphene Week 2014 » à Toulouse, France, May 6-9 2014
  • J.D. Aguirre - Morales, C. Mukherjee, S. Fregonese, C. Maneux and T. Zimmer, "Analytical Study of Performances of Bilayer and Monolayer Graphene FETs based on Physical Mechanisms", Graphene Week 2014 » à Toulouse, France, 6-9 Mai 2014
  • D. Logoteta, G. Fiori, G. Iannaccone, "Optimization and benchmarking of graphene-based heterostructure", FETs2014 International Workshop on Computational Electronics (IWCE), p. 1-3, March 24-28, 2014, IWCE 2014
  • G. Fiori, D. Logoteta, G. Iannaccone, "Performance assessment of graphene-based lateral and vertical heterostructure FETs", Graphene 2014, Toulouse France, May 06-09, 2014
  • Y. Illarionov, A. D. Smith, S. Vaziri, M. Östling, T. Mueller, M. C. Lemme, T. Grasser, "Bias-temperature instability in single-layer graphene field-effect transistors: A reliability challenge", Silicon Nanoelectronics Workshop (SNW), 2014 IEEE, Honolulu USA, June 08-09, 2014
  • S. Rodriguez, A. Rusu, S. Vaziri, A.D. Smith, M. Östling, M.C. Lemme, " A Graphene FET-Process Design KIT", Cadence User Conference 2014, Muinch Germany, May 19 - 21, 2014
  • S. Venica, F. Driussi, P. Palestri and T. Selemi, "Graphene base transistors with optimized emitter and dielectrics", Information and Communication Technology, Electronics and Microelectronics (MIPRO), 2014 37th International Convention, Opatija, Croazia, May 26-30, 2014

2013

  • Moreau E., Godey S., Wallart X., Razado-Colambo I., Avila J., Asemsio M.C., Vignaud D., Graphene growth by molecular beam epitaxy (on SiC), PDI Topical Workshop on MBE-Grown Graphene, Berlin, Germany, september 19-20, 2013
  • Razado-Colambo I., Nys J.P., Wallart X., Mareau E., Godey S., Avila J., Asensio M.C., Vignaud D., Scanning tunnelling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy, PDI Topical Workshop on MBE-Grown Graphene, Berlin, Germany, september 19-20, 2013
  • V. Di Lecce et al., “DC and Small-Signal Numerical Simulation of Graphene Base Transistor for Terahertz Operation”, presented at ESSDERC 2013, Sept. 16-20, 2013, Bucharest, Romania
  • I. Razado-Colambo, J. Avila, D. Vignaud, S. Godey, X. Wallart, M.C. Asensio, "Structural determination of bilayer graphene on SiC(0001) using synchrotron radiation photoelectron diffraction", International vacuum congress, Paris, France, September 9-13, 2013
  • Thomas Zimmer, University of Bordeaux, FR, Graphene devices for More than Moore applications, GE 2013 PhD school programme, DIEGM - Università degli Studi di Udine, 17-18 June 2013
  • David Mele, Sebastien Fregonese, Sylvie Lepilliet, Emanuelle Pichonat, Gilles Dambrine, Henri Happy, ”High Frequency Noise Characterisation of Graphene FET Device”, IEEE International Microwave Symposium, 2-7 June, Seattle 2013
  • S. Vaziri, G. Lupina, A. D. Smith, J. Dabrowski, G. Lippert, W. Mehr, M. Östling, M. C. Lemme " Graphene base hot electron transistors with high on/off current ratios," in Device Research Conference (DRC), 2013 71th Annual, 2013, pp. 39-40
  • S. Vaziri, G. Lupina, C. Henkel, A. D. Smith, J. Dabrowski, G. Lippert, W. Mehr, M. Östling, M. C. Lemme " DC Performance of Hot Electron Transistors with a Graphene Base Electrode," in European Materials Research Society (EMRS), 2013 Strasbourg
  • G. Fiori, G. Iannaccone, "Graphene RF Design: what really matters", Graphene 2013 Conference, Bilbao, Spain
  • G. Fiori, G. Iannaccone, "Graphene based transistors: what is good and what is not", E-MRS Conference, Strasbourg, France

2012

  • G. Fiori, G. Iannaccone “Insights on radio frequency bilayer graphene FETs”, IEDM 2012 Technical Digest, pp. 17.3.1-17.3.4, Dec. 2012
  • G. Fiori, G. Iannaccone, "Insights on radio frequency bilayer graphene FET ", Proceedings of the IEDM 2012 Conference, San Francisco, USA, December 10-12, 2012.
  • M.C. Lemme (Invited), "Graphene-based hot electron transistors and optoelectronic coupling", 42nd European Microwave Conference, Workshop on Graphene RF Nanoelectronics, Amsterdam, Netherlands,  October 28-November 2, 2012
  • H. Happi (Invited), "Graphene material for RF devices on flexible substrate", 42nd European Microwave Conference, Workshop on Graphene RF Nanoelectronics, Amsterdam, Netherlands,  October 28-November 2, 2012
  • S. Vaziri, et al., "An integration approach for graphene double-gate transistors," in Solid-State Device Research Conference (ESSDERC), 2012 Proceedings of the European, 2012, pp. 250-253

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